4.6 Article

Microscopic and optical investigation of Ge nanoislands on silicon substrates

Journal

NANOTECHNOLOGY
Volume 13, Issue 1, Pages 81-85

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/13/1/318

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We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

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