Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 49, Issue 1, Pages 249-257Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2002.998649
Keywords
CMOS active pixel sensor (APS); displacement damage; random telegraph signal (RTS)
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The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types.
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