Current transport in metal/hafnium oxide/silicon structure

Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO2/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO2/Si conduction band offset (or barrier height): 1.13 +/- 0.13 eV, ii) Pt/HfO2 barrier height: similar to 2.48 eV; iii) Al/HfO2 barrier height: similar to 1.28 eV; iv) electron effective mass in HfO2: 0.1 m(o), where m(o) is the free electron mass and v) a trap level at 1.5 0.1 eV below the HfO2 conduction band which contributes to Frenkel-Poole conduction.