Journal
PHYSICAL REVIEW LETTERS
Volume 88, Issue 5, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.88.057602
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Angular distributions of sputtered atoms from SiO2 and LiF single crystals were measured under the irradiation of 1 MeV/u swift heavy ions. In contrast to the almost isotropic distribution of SiO2, an additional jetlike component was observed for LiF. The total sputtering yield of SiO2 (approximate to10(2) atoms/ion) can be reproduced by an extended inelastic thermal spike model, whereas the huge yield of LiF (approximate to10(4) atoms/ion) needs a substantial decrease of the sublimation energy to be described by the model.
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