Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 5, Pages 766-768Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1445465
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We demonstrate a ternary (LaxY1-x)(2)O-3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. (C) 2002 American Institute of Physics.
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