Journal
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume 89, Issue 1-3, Pages 225-228Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0921-5107(01)00790-5
Keywords
SiGe; dopant; antimony; phosphorus; diffusion; strain
Ask authors/readers for more resources
From critical synthesis of the published theoretical and experimental studies on biaxial stress and hydrostatic pressure influence on point defects concentrations, and physical considerations on the Ge chemical effect, the diffusion of dopants in Silicon-Germanium alloys (SiGe) is modeled on the basis of the evolution of single point defect concentrations induced by the presence of Germanium atoms and the stress field of the SiGe material. The model is valid for SiGe strained and relaxed alloys with Ge content lower than 40% and is consistent with experimental data in the case of Phosphorus and Antimony. (C) 2002 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available