Journal
ELECTRONICS LETTERS
Volume 38, Issue 4, Pages 157-158Publisher
IEE-INST ELEC ENG
DOI: 10.1049/el:20020119
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The charge-to-breakdown of 3.3 nm oxynitride films shows significant degradation after irradiation with 342 MeV An ions. In contrast, 5.4 nm Al2O3 films exhibit much less degradation for similar heavy-ion stress.
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