n+-GaN formed by Si implantation into p-GaN

Si-28(+) implantation into Mg-doped GaN, followed by thermal annealing in N-2 was performed to achieve n(+)-GaN layers. Multiple implantation was used to form a uniform Si implanted region. It was found that the carrier concentration of the films changed from 3x10(17) cm(-3) (p-type) to 5x10(19) cm(-3) (n-type) when the samples were annealed in N-2 ambient at 1000 degreesC. The activation efficiency of Si in Mg-doped GaN was as high as 27%. In addition, planar GaN n(+)-p junctions formed by Si-implanted GaN:Mg were also achieved. (C) 2002 American Institute of Physics.