Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

We have grown (InyGa1-y)(1-x)MnxAs ferromagnetic semiconductor layers with Mn composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., ysimilar to0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x(eff), following the empirical equation T-C=1300xx(eff). We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x(eff)greater than or equal to0.08) and the hole concentration is of the order of 10(19) cm(-3). (C) 2002 American Institute of Physics.