High-performance polycrystalline silicon thin film transistors on non-alkali glass produced using continuous wave laser lateral crystallization

We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm(2)/V.s for n-channel TFT and 200 cm(2)/V.s for p-channel TFT on 300 mm x 300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450 degreesC. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI circuits to be fabricated on large non-alkali class substrates.