Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 11, Pages 1897-1899Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1458692
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We present theoretical and experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal-oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polycrystalline silicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the x-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface. (C) 2002 American Institute of Physics.
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