Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 12, Pages 2135-2137Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1450049
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Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05+/-0.1 eV between HfO2 (in HfO2/15 Angstrom SiO2/Si) and SiO2 (in 15 Angstrom SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Angstrom SiOxNy/Si and HfO2/15 Angstrom SiO2/Si systems. (C) 2002 American Institute of Physics.
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