Journal
JOURNAL OF CRYSTAL GROWTH
Volume 237, Issue -, Pages 1-7Publisher
ELSEVIER
DOI: 10.1016/S0022-0248(01)01840-1
Keywords
adsorption; diffusion; growth models; molecular beam epitaxy; semiconducting silicon
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First-principle total-energy calculations performed for group-IV adatom diffusion on hydrogenated Si(1 0 0) surfaces are reviewed. Elementary atomic reactions during surface diffusion are identified. The morphology of epitaxially grown films is discussed based on quantum mechanical calculations. (C) 2002 Elsevier Science B.V. All rights reserved.
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