A low-temperature CVD process for silicon carbide MEMS

A low-temperature chemical vapor deposition (CVD) process utilizing the single precursor molecule 1,3-disilabutane (DSB) is used to grow polycrystalline cubic silicon carbide (SiC) films for microelectromechanical systems (MEMS) applications at temperatures of 800-1000 degreesC and pressures between 10(-4) and 10(-5) Torr. With this deposition method. the fabrication of an all-SiC cantilever beam array is shown using standard microfabrication processes. Additionally, the coating of released polycrystalline Si (polySi) micromachines with SiC films is achieved. Conformal, pin-hole free coatings are obtained at 800 degreesC yielding composite microstructures that call be actuated and exhibit superior chemical and mechanical properties when compared to their Si analogs. (C) 2002 Elsevier Science B.V All rights reserved.