4.7 Article

Hydrogen Catalytic Oxidation Reaction on Pd-Doped Porous Silicon

Journal

IEEE SENSORS JOURNAL
Volume 2, Issue 2, Pages 89-95

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2002.1000248

Keywords

Calorimetric sensors; catalytic materials; chemical sensors; electroless deposition; hydrogen oxidation reaction; porous silicon

Funding

  1. General Secretariat for Research and Technology [PENED 99ED449]

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The efficiency of Pd-doped porous silicon (PS) as a catalytic material for hydrogen sensing is studied. Pd is deposited by an electroless process on the internal surface of porous silicon. The catalytic behavior of Pd-doped PS samples is estimated and the parameters that influence the kinetics of the chemical reaction are evaluated. The catalytic activity is examined through the kinetics of the chemical reaction, which occurs in low hydrogen content mixtures with air (up to 1% v/v in air), far below the mixture flammability limit. It was found that the catalytic activity of Pd-doped porous silicon at 160 degrees C is significantly higher than that of a planar surface covered with Pd. The dependence of the catalytic activity on processing conditions was also evaluated. These results open important new possibilities for applications in gas sensors.

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