N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

N,N-'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm(2) V-1 s(-1) and current on/off ratios >10(5) were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of similar to20 Angstrom for thin evaporated films of PTCDI-C8H, which is consistent with the value of similar to21 +/- 2 Angstrom obtained from our simulations when an interdigitated packing structure is assumed. (C) 2002 American Institute of Physics.