Journal
JOURNAL OF APPLIED PHYSICS
Volume 91, Issue 8, Pages 5029-5034Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1464231
Keywords
-
Categories
Ask authors/readers for more resources
A theoretical analysis based on a perturbation method is used to elucidate the results of attenuated total reflection (ATR) measurements performed on silicon oxide layers of different thicknesses on silicon substrates. This analysis shows that the absorbance ATR spectrum in p polarization is the image of the layer energy loss function, under specific conditions. It is pointed out that the enhanced sensitivity of ATR is controlled by the air gap thickness, the optical properties of the media involved, and the probing light polarization. An exact ATR spectrum simulation using a matrix formalism showed that straightforward interpretation in terms of the layer dielectric function is limited to a very narrow layer thickness range. The ATR spectrum fitting process is considered for layers out of this range and evaluated for the interpretation of experimental silicon oxide layer spectra. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available