Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 15, Pages 2749-2751Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1468915
Keywords
-
Categories
Ask authors/readers for more resources
Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal-oxide-semiconductor structures is illustrated. Using this method, barrier heights associated with the Al2O3 gate dielectric films are investigated. Also, the main conduction mechanism in Al2O3 gate dielectric films is identified to be tunneling. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
