Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 16, Pages 3012-3014Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1472472
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We present results on wavelength division multiplexing of radio-frequency single-electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of crosscoupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced crosscapacitance and inductance, and should allow 20-50 channels to be multiplexed. (C) 2002 American Institute of Physics.
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