Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit strong hole localization even with vanishing separation between the dots, and a nonparabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures. Our study based on an eight-band strain-dependent k . p Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.