Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

A technique is presented for measuring the density of interface traps versus energy D-IT(E) using the Hall effect in metal-oxide-semiconductor samples. Good agreement is obtained between this Hall approach and standard C-V techniques in both SiC and silicon test devices. D-IT(E) is found to be much higher in 4H-SiC compared to 6H devices oxidized at the same time. D-IT(E) in both SiC poly types increases exponentially with energy approaching the conduction bandedge. (C) 2002 American Institute of Physics.