Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 190, Issue -, Pages 652-656Publisher
ELSEVIER
DOI: 10.1016/S0168-583X(01)01242-3
Keywords
helium; ion implantation; tungsten; elastic recoil detection analysis; hydrogen
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Retention of He implanted into W single crystals and the He irradiation effects on H behavior were studied by ion beam analysis techniques. During implantation of He-4(+) with 2-10 keV at 295 K, an accumulation of H started in the He implanted layer when the retained He concentration saturated. For the crystal irradiated by 10 keV He at 820 K, a remarkable increase of H was found in the He saturated layer, after stopping the implantation and cooling down the crystal below 400 K. Though blisters and exfoliation were observed for the surface irradiated at 820 K, less lattice disorder was found in the implanted layer and the thermal release of H occurred at lower temperature, in comparison with the crystal implanted at 295 K. (C) 2002 Elsevier Science B.V. All rights reserved.
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