Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 303, Issue 1, Pages 83-87Publisher
ELSEVIER
DOI: 10.1016/S0022-3093(02)00970-5
Keywords
-
Ask authors/readers for more resources
The atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al2O3) or 0.6 nm (ZrO2), the band gaps of the Al2O3 and ZrO2 films deposited by ALCVD are 6.7+/-0.2 and 5.6+/-0.2 eV, respectively. The valence band offsets at the Al2O3/Si and ZrO2/Si interface are determined to be 2.9+/-0.2 and 2.5+/-0.2 eV, respectively. Finally, the escape depths of Al2p in Al2O3 and Zr3p3 in ZrO2 are 2.7 and 2.0 nm, respectively. (C) 2002 Published by Elsevier Science B.V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available