Stacking-fault formation and propagation in 4H-SiC PiN diodes

Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm(2) and 160 A/cm(2). Dark areas in the emission develop because of stacking faults and the current capability of the diode drops. More detailed images are produced by reducing the current by a factor of 1000. The low-current images are bright lines at dislocations bounding the stacking faults and at or near the stacking-fault intersection with the surface. Stacking faults nucleate 1-2 mum below the surface. Most, but not all, continue growing until they span the diode. Growth dynamics and their dependence on the current density are discussed.