1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 mum InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 degreesC. 1.3 mum ground state lasing is obtained up to a temperature of 167 degreesC. (C) 2002 American Institute of Physics.