Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 18, Pages 3358-3360Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1478146
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We have investigated the effects of rapid thermal annealing under vacuum on the CoFe-doped ZnO [Zn1-x(Co0.5Fe0.5)(x)O] films grown by reactive magnetron co-sputtering. At least up to x=0.15, the films have the single phase of the same wurtzite structure as pure ZnO. Ferromagnetism was observed for the CoFe-doped ZnO films. We found that rapid thermal annealing leads to a remarkable increase in the spontaneous magnetization of the CoFe-doped ZnO as well as the electron concentration. The annealing also leads to a significant increase in the Curie temperature (T-C), resulting in room temperature ferromagnetism with T-C>300 K for the CoFe-doped ZnO films. (C) 2002 American Institute of Physics.
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