Journal
JOURNAL OF APPLIED PHYSICS
Volume 91, Issue 10, Pages 6725-6728Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1471928
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We have fabricated a silicon point-contact channel single-electron transistor (SET) with an ultrasmall dot. By narrowing only the point-contact region and suppressing the parasitic series resistance, a peak conductance as large as 8.8 muS and single-electron addition energy as large as 128 meV are simultaneously obtained. A current staircase due to the large quantum level spacing is clearly observed at low temperatures. From numerical calculations, it is found that the staircase feature due to discrete quantum levels stands out even at room temperature in future silicon SETs with an ultrasmall dot. (C) 2002 American Institute of Physics.
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