Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 21, Pages 3967-3969Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1482786
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The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature. (C) 2002 American Institute of Physics.
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