Spatial and intensity modulation of light emission from a silicon LED matrix

A novel experimental multiterminal silicon light emitting diode matrix is described, where both the emitted light intensity and the spatial light pattern of the device are controlled by insulated metal-oxide-semiconductor (MOS) gate voltages. It is found that the light intensity is a nonlinear quadratic function of the applied gate voltage. The nonlinear relationship enables, for example, the mixing of electrical input signals and modulation of the optical output signal, which can not readily be achieved with two terminal Si-light-emitting diodes, since they exhibit a linear relationship between diode avalanche current and light intensity.