Journal
SURFACE SCIENCE
Volume 507, Issue -, Pages 582-587Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(02)01404-8
Keywords
surface electronic phenomena (work function, surface potential, surface states, etc.); scanning tunneling microscopy; scanning tunneling spectroscopies; silicon; single crystal epitaxy
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The structural features and electronic structure of a nanoscale rounded Si island on the Si(1 1 1) substrate are investigated with scanning tunneling microscopy and scanning tunneling spectroscopy. The rounded island is composed of 162 atoms which arrange in three reconstructed 5 x 5 unit cells. The structural features and electronic structure of the island show the following: the dangling bonds on the outside adatoms of the island have a high density of states compared with that on the inside adatoms; and the height of the outside adatoms is slightly higher than that of the inside adatoms. These results are attributed to a charge transfer caused by the structural relaxation to stabilize the rounded island. (C) 2002 Elsevier Science B.V. All rights reserved.
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