Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 49, Issue 6, Pages 1077-1079Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.1003752
Keywords
asymmetric channel; charge-pumping; halo doping; hotcarrier; LAC; MOSFET optimization; p-MOSFET
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Single halo p-MOSFETs with channel lengths down to 100 urn are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle V-T adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes.
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