Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume 485, Issue 3, Pages 768-773Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-9002(01)02147-7
Keywords
SiC diamond; silicon; GaAs; hadrons; radiation damage properties
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In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV. is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs. (C) 2001 Elsevier Science B.V. All rights reserved.
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