4.6 Article

Bias-voltage-induced phase transition in bilayer quantum Hall ferromagnets

Journal

PHYSICAL REVIEW B
Volume 65, Issue 23, Pages -

Publisher

AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.65.235319

Keywords

-

Ask authors/readers for more resources

We consider bilayer quantum Hall systems at total filling factor nu=1 in presence of a bias voltage Delta(v) that leads to different filling factors in each layer. We use auxiliary field functional-integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a nu=1 phase-coherent state with charge imbalance. We present simple analytical expressions for bias-dependent renormalized charge imbalance and pseudospin stiffness that are sensitive to the softening of collective modes.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available