Journal
JOURNAL OF APPLIED PHYSICS
Volume 91, Issue 12, Pages 9772-9776Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1481958
Keywords
-
Categories
Ask authors/readers for more resources
The thermal conductivity of SiO2 thin films prepared using various procedures has been studied using a 3omega method. The thermal conductivity of SiO2 thin films of above approximately 500 nm thickness decreases as the porosity of the specimen, which is determined by infrared absorption spectroscopy, increases. Below approximately 250 nm thickness, the observed thermal conductivity of the SiO2 thin films systematically decreases as a function of film thickness. The data have been analyzed based on a SiO2-thickness-independent thermal conductivity and interfacial resistance. The total estimated interfacial resistance between the metal strip and the film, and between the film and the substrate is about 2 x 10(-8) m(2) KW-1. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available