Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 25, Pages 4858-4860Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1489098
Keywords
-
Categories
Ask authors/readers for more resources
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available