Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 1, Pages 144-146Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1492008
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Using infrared irradiation to heat an industrial brass (Cu-Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices. (C) 2002 American Institute of Physics.
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