Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 13, Pages 7382-7388Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b01080
Keywords
resistive switching; surface hydrogen annealing; forming-free; Arrhenius activation theory; oxygen vacancies drifting
Funding
- National Major Research Program of China [2013CB932602]
- Major Project of International Cooperation and Exchanges [2012DFA50990]
- Program of Introducing Talents of Discipline to Universities, NSFC [51232001, 51172022, 51372023, 51372020]
- Beijing Municipal Commission of Education
- Fundamental Research Funds for the Central Universities
- Program for Changjiang Scholars and Innovative Research Team in University
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In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO (Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen annealing treatment. The R-on/R-off rate is dramatically increased from similar to 10 to similar to 10(4) after the surface treatment. Such an enhanced performance is attributed to the introduced oxygen vacancies layer at the top of ZnO nanorods. The device also exhibits excellent switching and retention stability. In addition, the carrier migration behavior can be well interpreted by classical trap-controlled space charge limited conduction, which verifies the forming of conductive filamentary in low resistive state. On this basis, Arrhenius activation theory is adopted to explain the drifting of oxygen vacancies, which is further confirmed by the time pertinence of resistive switching behavior under different sweep speed. This fabrication approach offers a useful approach to enhance the switching properties for next-generation memory applications.
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