Related references
Note: Only part of the references are listed.Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon
H. von Wenckstern et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)
Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4
Christian Kranert et al.
JOURNAL OF APPLIED PHYSICS (2014)
Continuous composition spread using pulsed-laser deposition with a single segmented target
Holger von Wenckstern et al.
CRYSTENGCOMM (2013)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates
Lingyi Kong et al.
THIN SOLID FILMS (2012)
β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
Takayoshi Oshima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Vertical solar-blind deep-ultraviolet schottky photodetectors based on beta-Ga2O3 substrates
Takayoshi Oshima et al.
APPLIED PHYSICS EXPRESS (2008)
Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
Takayoshi Oshima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
Yoshihiro Kokubun et al.
APPLIED PHYSICS LETTERS (2007)
Subsolidus phase relationships in the Ga2O3-Al2O3-TiO2 system
AL Jaromin et al.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2005)