In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films

In situ monitoring of the electrical resistivity of ZnO and W thin films during atomic layer deposition (ALD) was performed using a four-point probe. Large oscillations were observed during the ZnO ALD resistivity measurements. The resistivity dramatically increased during each diethyl zinc exposure and decreased during each H2O exposure. In contrast, the W ALD resistivity measurements exhibited a steplike pattern where the resistivity decreased during the Si2H6 exposures and remained constant during the WF6 exposures. In situ resistivity measurements will be useful to monitor ALD processing and also may help to optimize and understand the properties of gas sensors. (C) 2002 American Institute of Physics.