Journal
PHYSICAL REVIEW LETTERS
Volume 89, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.89.057601
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A first-principles-derived scheme is developed to compute the piezoelectric coefficients e(i j) of semiconductor alloys. This method is applied to study the effect of atomic arrangement and composition on e(33) in wurtzite Ga In1- x N-x . Results obtained by this method for ordered structures are in good agreement with direct first-principles calculations. We predict that atomic ordering can have a large effect on piezoelectricity and that e(33) of disordered materials is nearly linear with composition. Microscopic origins for these features are revealed.
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