Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 38, Issue 8, Pages 1053-1061Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2002.800994
Keywords
Mach-Zehnder interferometer; optical switches; semiconductor optical amplifiers; ultrafast dynamics
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We present experimental and theoretical results on ultrafast nonlinear dynamics in InGaAsP semiconductor optical amplifiers (SOAs). Carrier heating, spectral hole burning, and two-photon absorption are analyzed by heterodyne pump-probe experiments which deliver basic model parameters like gain-phase coupling parameters of the material. The impact on the device performance induced by these physical effects is verified by cross-gain/cross-phase experiments on InGaAsP-based SOAs and Mach-Zehnder interferometer switches. In the co-propagation arrangement, the switching window with maximum transmission is shown to be 1.5 ps which translates into demultiplexing capabilities beyond 600 Gb/s. Calculations based on a distributed rate equation model show that, for high-speed applications, the switching window can be limited by pulse saturation and by subpicosecond nonlinear effects.
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