Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 17, Issue 8, Pages 762-768Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/17/8/304
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The key issues for growing III-V compound layers, free of structural defects, on Si substrates are clarified. The technologies for overcoming the fundamental problems have been developed. As a result, it has been clarified that dislocation-free III-V-N alloys can be grown on Si substrates whose lattice constants are matched to those of Si. Device structures of the GaAsPN/GaPN quantum well structure and the Si/GaPN/Si structure have been successfully grown on a Si (100) substrate covered with a thin GaP initial layer. The grown layers and hetero-interfaces contained no threading dislocations and no misfit dislocations, respectively. Neither stacking faults nor anti-phase domains were observed. A key issue for application to novel devices is the increase in nitrogen composition without degrading optical and electrical properties.
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