Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates

Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers and MgSe/ZnCdSe:Cl SL as n-cladding layers. The threshold current density was about 2.5 kA/cm(2). (C) 2002 American Institute of Physics.