Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4919431
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Funding
- NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS) [EEC-1160504]
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A dense, homogeneous and crack-free ferroelectric PZT thin film with < 100 >-preferred orientation was produced using the sol-gel method. The volume fraction a(100) of < 100 >-oriented grains in the PZT film was calculated [alpha((100)) approximate to 80%] from XRD of the PZT thin film and powder. The PZT thin film exhibits an open polarization vs. electric field loop and a low leakage current density from 10(-8) A/cm(2) to 10(-7) A/cm(2). The electrical conduction data were fit to a Schottky-emission model with deep traps from 100 kV/cm to 250 kV/cm. A modified capacitance model was introduced that adds electrical domain capacitance based on a metal-ferroelectric-metal (MFM) system with Schottky contacts. The model reproduces the observed non-linear capacitance vs. voltage behavior of the film. (C) 2015 AIP Publishing LLC.
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