Journal
JOURNAL OF APPLIED PHYSICS
Volume 118, Issue 7, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4928559
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Funding
- National Science Foundation (NSF) [1124733]
- Semiconductor Research Corporation (SRC) Nanoelectronic Research Initiative
- National Science Foundation [ACI-1053575]
- MARCO
- DARPA
- Directorate For Engineering [1124733] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1124733] Funding Source: National Science Foundation
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The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a Mexican hat or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi2Se3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects. (C) 2015 AIP Publishing LLC.
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