Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 49, Issue 9, Pages 1614-1622Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.802618
Keywords
memories; metals; MOSFETS; work function
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This paper describes the electrical characteristics of the metal nanocrystal memory devices continued from the previous paper [1]. Devices with An, Ag, and Pt nanocrystals working in the F-N tunneling regime have been investigated and compared with Si nanocrystal memory devices. With hot-carrier injection such as the programming mechanism, retention time up to 10(6) s has been observed and 2-bit-per-cell storage capability has been demonstrated and analyzed. The concern of the possible metal contamination is also addressed by current-voltage (I-V) and capacitance-voltage (C-V) characterizations. The extracted inversion layer mobility and minority carrier lifetime suggest that the substrate is free from metal contamination with continuous operations.
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