Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 49, Issue 9, Pages 1606-1613Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.802617
Keywords
memories; metals; MOSFETs; work function
Ask authors/readers for more resources
This paper describes the design principles and fabrication process of metal nanocrystal memories. The advantages of metal nanocrystals over their semiconductor counterparts include higher density of states, stronger coupling with the channel, better size scalability, and the design freedom of engineering the work functions to optimize device characteristics. One-dimensional (I-D) analyses are provided to illustrate the concept of work function engineering, both in direct-tunneling and F-N-tunneling regimes. A self-assembled nanocrystal formation process by rapid thermal annealing of ultrathin metal film deposited on top of gate oxide is developed and integrated with NMOSFET to fabricate such devices. More detailed electrical characterization will be presented in Part II of this work.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available