Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 17, Issue 9, Pages L47-L54Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/17/9/103
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In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1-xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height. Pt/Ti/Au contacts on GaN provide a barrier height of 1.18 +/- 10.07 eV, increasing up to 2.0 +/- 0.1 eV on Al0.31Ga0.69N. Further improvement of Schottky contacts is achieved by surface passivation with plasma-enhanced chemical vapour deposited SiO2 or SixNy, which reduces the leakage current by two orders of magnitude and structural modifications in the metal due to thermal ageing.
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