Journal
JOURNAL OF APPLIED PHYSICS
Volume 118, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4935814
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Funding
- Department of Defense (DoD) Center of Excellence in Advanced Nanomaterials and Devices (CEAND) [W911NF-11-1-0209, W911NF-11-1-0133]
- National Science Foundation Centers of Research Excellence in Science and Technology (NSF-CREST) Center for Nano- and Bio-inspired Materials and Devices (CNBMD) [HRD 1036494]
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We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications. (C) 2015 AIP Publishing LLC.
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