Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 10, Pages 1788-1790Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1505120
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We show a systematic trend of x-ray photoelectron binding energy shifts for Zr- and Hf-silicates, which are related to the composition of the films. The binding energy for the core photoelectrons can shift by up to 2 eV, depending on the relative electronegativities of the second nearest-neighbor elements. Understanding these shifts helps determine the underlying local electronic and chemical nature of the silicate network. Furthermore, we explain how charge at the dielectric-semiconductor interface can lead to shifts in the measured Si 2p peak binding energy by as much as 1 eV. The direction and magnitude of the binding energy shift can be used to determine the sign and density of the charge at the interface. (C) 2002 American Institute of Physics.
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